GaN Wide Bandgap Semiconductor Enabling 1200V and Beyond Power Switches, Now Commercially Available for 200 mm Large Scale Manufacturing > U.S. Naval Research Laboratory > NRL News
New 1200V GaN Power Switch With Kevin Source Lead – GaNPower
Odyssey readies 1200V vertical GaN to take on SiC ...
GaNPower Demonstrates Industry's First 1200 V Single-Die E-Mode GaN Power Devices – GaNPower
Vertical GaN Advantages in the Industry - Power Electronics News
Industry's first 1200V Half Bridge Module based on GaN technology
Title of Presentation
![4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram](https://www.researchgate.net/publication/316082422/figure/fig3/AS:668200039612418@1536322712314/Market-positioning-of-SiC-and-GaN-Power-devices-17.jpg "4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram")
4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram
1200V GaN FET for 99% efficiency ...
SiC and GaN Semiconductors | DigiKey
Transphorm to Demo 99% Efficiency Power Switching Using GaN Power Transistor at ISPSD 2022 - EE Times Asia
ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY APPLICATIONS
Wolfspeed 1200V & 1700V Half-Bridge SiC Modules Designed for Ultra-High Power Density – GaN & SiC Tech Hub
1200V Rating Achieved on Vertical GaN Power Devices - Power Electronics News
Design Considerations with GaN & SiC - Power Electronics News
IV Works to develop 1200V GaN semiconductor material with US' Applied - ETNews
SiC in Stock: 1200V, 21mΩ Baseplate-less SiC Six-Pack Module in Industry-Standard Footprint – GaN & SiC Tech Hub
NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device - NexGen Power Systems
ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY APPLICATIONS
NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device - NexGen Power Systems
Philip Zuk on LinkedIn: Transphorm to Demonstrate 99% Efficiency Power Switching with a 1200 Volt…
Microsemi – GaN & SiC Tech Hub
.jpg "트랜스폼, 99% 효율의 1200V GaN 트랜지스터 시연")
트랜스폼, 99% 효율의 1200V GaN 트랜지스터 시연
IV Works to develop 1200V GaN semiconductor material with US' Applied - ETNews
Industry's first 1200V Half Bridge Module based on GaN technology
Enkris' demonstrates CMOS-compatible high-voltage GaN-on-Si HEMT epi reaches 300mm
