Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics | Semantic Scholar
Basic unit cell of a MPS diode | Download Scientific Diagram
The Wolfspeed MPS Diode Advantage - YouTube
Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
Advantages of the 1200V SiC Schottky Diode with MPS Design - Electronics Maker
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode
Figure 2 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
MPS (Merged p-i-n/Schottky) Diode
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
Junction barrier Schottky diode (JBS) and merged PiN Schottky diode... | Download Scientific Diagram
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress - Technical Articles
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
4.4.3.2 MPS Diode Simulation
Figure 1 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
The Wolfspeed MPS Diode Advantage - YouTube
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Advantages of the 1200 V SiC Schottky Diode with MPS Design
Device Design Assessment of GaN Merged P-i-N Schottky Diodes
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
